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DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions
Title statement DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions / aut. Arpád Kósa, Ľubica Stuchlíková, Ladislav Harmatha, Jaroslav Kováč, Beata Sciana, Wojciech Dawidowski, Marek Tlaczala Main entry-name Kósa, Arpád, 1987- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Stuchlíková, Ľubica, 1967- Z1 (Author) - FEI Ústav elektroniky a fotoniky Harmatha, Ladislav, 1948- Z8 (Author) - FEI Ústav elektroniky a fotoniky Kováč, Jaroslav, 1947- Z8 (Author) - FEI Ústav elektroniky a fotoniky Sciana, Beata (Author) Dawidowski, Wojciech (Author) Tlaczala, Marek (Author) In Materials Science in Semiconductor Processing. -- ISSN 1369-8001. -- Vol. 74, (2018), s. 313-318 Subj. Headings semiconductor structure composition deep energy level Deep Level Transient Spectroscopy InGaAs GaAsN AP-MOVPE Language English URL https://www.sciencedirect.com/science/article/pii/S1369800117310685 Document kind RBX - článok z periodika Category ADC - Scientific titles in foreign carented magazines and noticed year-books Category (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu In databases CC: 000415924400045
SCOPUS: 2-s2.0-85033477644Year 2018 article
Number of the records: 1