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DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions

  1. Title statementDLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions / aut. Arpád Kósa, Ľubica Stuchlíková, Ladislav Harmatha, Jaroslav Kováč, Beata Sciana, Wojciech Dawidowski, Marek Tlaczala
    Main entry-name Kósa, Arpád, 1987- (Author) - FEI Ústav elektroniky a fotoniky
    Another responsib. Stuchlíková, Ľubica, 1967- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Harmatha, Ladislav, 1948- Z8 (Author) - FEI Ústav elektroniky a fotoniky
    Kováč, Jaroslav, 1947- Z8 (Author) - FEI Ústav elektroniky a fotoniky
    Sciana, Beata (Author)
    Dawidowski, Wojciech (Author)
    Tlaczala, Marek (Author)
    In Materials Science in Semiconductor Processing. -- ISSN 1369-8001. -- Vol. 74, (2018), s. 313-318
    Subj. Headings semiconductor structure
    composition
    deep energy level
    Deep Level Transient Spectroscopy
    InGaAs
    GaAsN
    AP-MOVPE
    LanguageEnglish
    URLhttps://www.sciencedirect.com/science/article/pii/S1369800117310685
    Document kindRBX - článok z periodika
    CategoryADC - Scientific titles in foreign carented magazines and noticed year-books
    Category (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    In databases CC: 000415924400045
    SCOPUS: 2-s2.0-85033477644
    Year2018
    article

    article

Number of the records: 1  

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