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- Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor / aut. Martin Florovič, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Martin Weis, Jean-Claude Jacquet, Sylvain Laurent Delage
Florovič Martin ; 033000 Kováč Jaroslav jr. ; 033000 Kováč Jaroslav ; 033000 Chvála Aleš ; 033000 Weis Martin ; 033000 Jacquet Jean-Claude Delage Sylvain Laurent
Semiconductor Science and Technology . Vol. 36, No. 2 (2021), Art. no. 025019 [9] s.
Gallium Nitride field-effect transistor High electron mobility transistor average temperature thermal resistance
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ADC - Scientific titles in foreign carented magazines and noticed year-books
V3 - Vedecký výstup publikačnej činnosti z časopisu
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- Identification of electrically active defects in modern structures based on gallium nitride / aut. Jakub Drobný, Arpád Kósa, Martin Weis, Jaroslav jr Kováč, Ľubica Stuchlíková
Drobný Jakub ; 033000 Kósa Arpád ; 033000 Weis Martin ; 033000 Kováč Jaroslav jr. ; 033000 Stuchlíková Ľubica ; 033000
Mathematics, Information Technologies and Applied Sciences 2019 : . S. 50-58
Gallium Nitride High electron mobility transistor defect characterisation in semiconductors high frequency and high-power structures
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AFC - Reports at international scientific conferences
V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníkaarticle
- E-learning course as the first step to a mysterious world of science and technology / aut. Ľubica Stuchlíková, Robert Szobolovszký, Peter Benko, Jaroslav jr Kováč, Jiří Hrbáček
Stuchlíková Ľubica ; 033000 Szobolovszký Robert ; 033000 Benko Peter ; 033000 Kováč Jaroslav jr. ; 033000 Hrbáček Jiří
Distance learning, simulation and communication 2017 : . CD-ROM, S. 325-330
e-learning course Wide band-gap semiconductors silicon silicon carbide Gallium Nitride popularization of science and technology Electronics
článok zo zborníka
AFC - Reports at international scientific conferences
V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníkaarticle