InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator / Filip Gucmann, Dagmar Gregušová, Roman Stoklas, Ján Dérer, R Kúdela, Karol Fröhlich, Peter Kordoš
Gucmann Filip ; E030  Gregušová Dagmar Stoklas Roman Dérer Ján Kúdela R. Fröhlich Karol Kordoš Peter ; E030
Applied Physics Letters . Vol. 105, (2014), Art. no 183504 [4] p.
http://scitation.aip.org/content/aip/journal/apl/105/18/10.1063/1.4901170
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