Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors / aut. Martin Florovič, Roman Stoklas, Jaroslav jr Kováč, Peter Kordoš
Florovič Martin ; 033000  Stoklas Roman Kováč Jaroslav jr. ; 033000 Kordoš Peter ; 033000
Semiconductor Science and Technology . Vol. 32, No. 2 (2017), Art. no. 025017 [5] s.
GaN field-effect transistors threshold voltage
článok z periodika
ADC - Scientific titles in foreign carented magazines and noticed year-books
V3 - Vedecký výstup publikačnej činnosti z časopisu