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III-As high electron mobility transistors with recessed ex-situ gate oxide
CREPC201503 CREPC201506 Title statement III-As high electron mobility transistors with recessed ex-situ gate oxide / aut. Filip Gucmann, R Kúdela, Karol Fröhlich, Jozef Liday, Peter Vogrinčič, Štefan Gaži, Roman Stoklas, Peter Kordoš, Jozef Novák, Dagmar Gregušová Main entry-name Gucmann, Filip, 1987- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Kúdela, R. Z5 (Author) Fröhlich, Karol Z5 (Author) Liday, Jozef, 1945- Z2 (Author) - FEI Ústav elektroniky a fotoniky Vogrinčič, Peter, 1952- Z2 (Author) - Centrum STU pre nanodiagnostiku Gaži, Štefan Z5 (Author) Stoklas, Roman Z5 (Author) Kordoš, Peter, 1939- Z8 (Author) - FEI Ústav elektroniky a fotoniky Novák, Jozef Z5 (Author) Gregušová, Dagmar Z5 (Author) In ADEPT 2014 [285 s] / Pudiš, Dušan. -- Žilina : University of Žilina, 2014. -- ISBN 978-80-554-0881-1. -- S. 5-8 Language English Document kind RZB - článok zo zborníka Category AFD - Reports at home scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Year 2014 
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Number of the records: 1