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Influence of temperature on resistive switching mechanism in HfO2-based atomic layer deposition grown metal-insulator-metal structures
CREPC201506_01 CREPCXX CREPC201511 CREPC201601 CREPC201602 CREPC201603 CREPC201606 CREPC201606O Title statement Influence of temperature on resistive switching mechanism in HfO2-based atomic layer deposition grown metal-insulator-metal structures / aut. Peter Benko, Miroslav Mikolášek, Peter Jančovič, Ladislav Harmatha, Karol Fröhlich Main entry-name Benko, Peter, 1981- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Mikolášek, Miroslav, 1983- Z2 (Author) - FEI Ústav elektroniky a fotoniky Jančovič, Peter, 1990- Z3 (Author) - FEI Ústav elektroniky a fotoniky Harmatha, Ladislav, 1948- Z1 (Author) - FEI Ústav elektroniky a fotoniky Fröhlich, Karol Z5 (Author) In ADEPT 2015 [334 s] / 3rd international conference on advances in electronic and photonic technologies. -- Žilina : University of Žilina, 2015. -- ISBN 978-80-554-1033-3. -- S. 169-172 Language English Document kind RZB - článok zo zborníka Category AFD - Reports at home scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Year 2015 
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Number of the records: 1