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Performance analysis of monolithically integrated depletion-/enhancement-mode InAlN/GaN heterostructure HEMT transistors

	CREPC201709 CREPC201710 CREPC201711 CREPC022018 CREPC201802 CREPC201803 CREPC201806
Title statement	Performance analysis of monolithically integrated depletion-/enhancement-mode InAlN/GaN heterostructure HEMT transistors / aut. Lukáš Nagy, Aleš Chvála, Viera Stopjaková, Michal Blaho, Ján Kuzmík, Dagmar Gregušová, Alexander Šatka
Main entry-name	Nagy, Lukáš, 1985- (Author) - FEI Ústav elektroniky a fotoniky
Another responsib.	Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Stopjaková, Viera, 1968- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Blaho, Michal, 1987- (Author)
	Kuzmík, Ján (Author)
	Gregušová, Dagmar (Author)
	Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky
In	Applied electronics 2017 / International conference on applied electronics. -- Pilsen : University of West Bohemia, 2017. -- ISBN 978-80-261-0641-8. -- ISSN 1803-7232. -- S. 129-132
Subj. Headings	InAlN/GaN heterostructure
	monolithic integration
	HEMT transistor
	digital inverter
Language	English
URL	http://ieeexplore.ieee.org/document/8053599/
Document kind	RZB - článok zo zborníka
Category	AFC - Reports at international scientific conferences
Category (from 2022)	V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
In databases	WOS: 000427091900027 SCOPUS: 2-s2.0-85034576802
Year	2017

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Number of the records: 1