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Device and circuit models of InAlN/GaN D- and Dual-Gate E-Mode HEMTs for design and characterisation of monolithic NAND logic cell
Title statement Device and circuit models of InAlN/GaN D- and Dual-Gate E-Mode HEMTs for design and characterisation of monolithic NAND logic cell / aut. Aleš Chvála, Lukáš Nagy, Juraj Priesol, Daniel Donoval, Alexander Šatka, Michal Blaho, Dagmar Gregušová, Ján Kuzmík Main entry-name Chvála, Aleš, 1981- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Nagy, Lukáš, 1985- Z2 (Author) - FEI Ústav elektroniky a fotoniky Marek, Juraj, 1983- Z2 (Author) - FEI Ústav elektroniky a fotoniky Priesol, Juraj, 1986- Z2 (Author) - FEI Ústav elektroniky a fotoniky Donoval, Daniel, 1953- Z1 (Author) - FEI Ústav elektroniky a fotoniky Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky Blaho, Michal, 1982- (Author) Gregušová, Dagmar (Author) Kuzmík, Ján (Author) In DTIS 2018 / International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS 2018). -- Danvers : IEEE, 2018. -- ISBN 978-1-5386-5290-9. -- USB, [6] s. Subj. Headings monolithic integration NAND logic cell InAlN/GaN HEMT 2D device modeling and simulation HEMT circuit model Language English Document kind RZB - článok zo zborníka Category AFC - Reports at international scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Year 2018 article
Number of the records: 1