Number of the records: 1  

Device and circuit models of InAlN/GaN D- and Dual-Gate E-Mode HEMTs for design and characterisation of monolithic NAND logic cell

  1. Title statementDevice and circuit models of InAlN/GaN D- and Dual-Gate E-Mode HEMTs for design and characterisation of monolithic NAND logic cell / aut. Aleš Chvála, Lukáš Nagy, Juraj Priesol, Daniel Donoval, Alexander Šatka, Michal Blaho, Dagmar Gregušová, Ján Kuzmík
    Main entry-name Chvála, Aleš, 1981- (Author) - FEI Ústav elektroniky a fotoniky
    Another responsib. Nagy, Lukáš, 1985- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Marek, Juraj, 1983- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Priesol, Juraj, 1986- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Donoval, Daniel, 1953- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Blaho, Michal, 1982- (Author)
    Gregušová, Dagmar (Author)
    Kuzmík, Ján (Author)
    In DTIS 2018 / International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS 2018). -- Danvers : IEEE, 2018. -- ISBN 978-1-5386-5290-9. -- USB, [6] s.
    Subj. Headings monolithic integration
    NAND logic cell
    InAlN/GaN HEMT
    2D device modeling and simulation
    HEMT circuit model
    LanguageEnglish
    Document kindRZB - článok zo zborníka
    CategoryAFC - Reports at international scientific conferences
    Category (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Year2018
    article

    article

Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.