- Simulation analysis of InAlN/GaN monolithic NAND logic cell
Number of the records: 1  

Simulation analysis of InAlN/GaN monolithic NAND logic cell

  1. Title statementSimulation analysis of InAlN/GaN monolithic NAND logic cell / aut. Aleš Chvála, Lukáš Nagy, Juraj Marek, Juraj Priesol, Daniel Donoval, Martin Vilhan, Michal Blaho, Dagmar Gregušová, Ján Kuzmík, Alexander Šatka
    Main entry-name Chvála, Aleš, 1981- (Author) - FEI Ústav elektroniky a fotoniky
    Another responsib. Nagy, Lukáš, 1985- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Marek, Juraj, 1983- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Priesol, Juraj, 1986- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Donoval, Daniel, 1953- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Vilhan, Martin, 1994- Z3 (Author) - FEI Ústav elektrotechniky
    Blaho, Michal, 1982- (Author)
    Gregušová, Dagmar (Author)
    Kuzmík, Ján (Author)
    Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    In ASDAM 2018 [234 s.] / International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2018). -- Danvers : IEEE, 2018. -- ISBN 978-1-5386-7488-8. -- S. 167-170
    LanguageEnglish
    URLhttps://ieeexplore.ieee.org/document/8544508
    Document kindRZB - článok zo zborníka
    CategoryAFD - Reports at home scientific conferences
    Category (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Year2018
    article

    article

Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.