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Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline α-SiC
Title statement Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline α-SiC / aut. Bingsheng Li, Vladimír Kršjak, Jarmila Degmová, Zhiguang Wang, Tielong Shen, Hui Li, Stanislav Soják, Vladimír Slugeň, Atsuo Kawasuso Main entry-name Li, Bingsheng (Author) Another responsib. Kršjak, Vladimír, 1981- Z2 (Author) - FEI Ústav jadrového a fyzikálneho inžinierstva Degmová, Jarmila, 1972- Z2 (Author) - FEI Ústav jadrového a fyzikálneho inžinierstva Wang, Zhiguang (Author) Shen, Tielong (Author) Li, Hui (Author) Sojak, Stanislav, 1984- Z2 (Author) - FEI Ústav jadrového a fyzikálneho inžinierstva Slugeň, Vladimír, 1962- Z1 (Author) - FEI Ústav jadrového a fyzikálneho inžinierstva Kawasuso, Atsuo (Author) In Journal of Nuclear Materials. -- ISSN 0022-3115. -- Vol. 535, (2020), Art. no. 152180 [9] s. Subj. Headings He implantation Polycrystalline α-SiC Positron annihilation spectroscopy Vacancy-type defects annealing Language English URL https://www.sciencedirect.com/science/article/pii/S0022311519313406 Document kind RBX - článok z periodika Category ADC - Scientific titles in foreign carented magazines and noticed year-books Category (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu In databases CC: 000542050900007
DOI: 10.1016/j.jnucmat.2020.152180
SCOPUS: 2-s2.0-85083817134Year 2020 
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Number of the records: 1