Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Number of the records: 1

Title statement	Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure / aut. Peter Šichman, Stanislav Hasenöhrl, Roman Stoklas, Juraj Priesol, Edmund Dobročka, Štefan Haščík, Filip Gucmann, Andrej Vincze, Aleš Chvála, Juraj Marek, Alexander Šatka, Ján Kuzmík
Main entry-name	Šichman, Peter (Author)
Another responsib.	Hasenöhrl, Stanislav Z5 (Author)
	Stoklas, Roman (Author)
	Priesol, Juraj, 1986- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Dobročka, Edmund, 1955- Z5 (Author)
	Haščík, Štefan Z5 (Author)
	Gucmann, Filip, 1987- (Author)
	Vincze, Andrej, 1975- (Author)
	Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Marek, Juraj, 1983- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Kuzmík, Ján (Author)
In	Materials Science in Semiconductor Processing. -- ISSN 1369-8001. -- Vol. 118, (2020), Art. no. 105203 [5] s.
Subj. Headings	GaN
	Vertical transistor
	Semi-insulating
Language	English
URL	https://www.sciencedirect.com/science/article/pii/S1369800120307344
Document kind	RBX - článok z periodika
Category	ADC - Scientific titles in foreign carented magazines and noticed year-books
Category (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
In databases
Year	2020

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Number of the records: 1