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Growth of alpha- and beta-Ga(2)O(3)epitaxial layers on sapphire substrates using liquid-injection MOCVD
Title statement Growth of alpha- and beta-Ga(2)O(3)epitaxial layers on sapphire substrates using liquid-injection MOCVD / aut. Fridrich Egyenes-Pörsök, Filip Gucmann, Kristína Hušeková, Edmund Dobročka, Michal Sobota, Miroslav Mikolášek, Karol Fröhlich, Milan Ťapajna Main entry-name Egyenes-Pörsök, Fridrich (Author) Another responsib. Gucmann, Filip, 1987- (Author) Hušeková, Kristína (Author) Dobročka, Edmund, 1955- Z5 (Author) Sobota, Michal, 1998- Z4 (Author) - FEI Fakulta elektrotechniky a informatiky Mikolášek, Miroslav, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky Fröhlich, Karol 1954- (Author) Ťapajna, Milan, 1977- (Author) In Semiconductor Science and Technology. -- ISSN 0268-1242. -- Vol. 35, No. 11 (2020), Art. no. 115002 [10] s. Language English Document kind RBX - článok z periodika Category ADC - Scientific titles in foreign carented magazines and noticed year-books Category (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu In databases CC: 000575253900001
SCOPUS: 2-s2.0-85092570422Year 2020 
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Number of the records: 1