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High temperature operation of the MEMS piezoelectric sensor based on AlGaN/GaN heterostructure

  1. Title statementHigh temperature operation of the MEMS piezoelectric sensor based on AlGaN/GaN heterostructure / aut. Gabriel Vanko, Jaroslav Dzuba, Milan Držík, Vladimír Kutiš, S Kasemann, J Zehetner
    Main entry-name Vanko, Gabriel (Author)
    Another responsib. Dzuba, Jaroslav, 1987- (Author)
    Držík, Milan, 1949- (Author)
    Kutiš, Vladimír, 1975- Z1 (Author) - FEI Ústav automobilovej mechatroniky
    Kasemann, S. (Author)
    Zehetner, J. (Author)
    In ADEPT 2020 [192 s.] / International conference on Advances in electronic and photonic technologies (Adept 2020). -- Žilina : Vydavateľstvo EDIS, 2020. -- ISBN 978-80-554-1735-6. -- S. 33-36
    Subj. Headings III-N heterostructures
    MEMS
    piezoelectricity
    harsh environments
    pressure sensors
    high electron mobility transistors
    LanguageEnglish
    Document kindRZB - článok zo zborníka
    CategoryAFD - Reports at home scientific conferences
    Category (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Year2020
    article

    article

Number of the records: 1  

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