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High temperature operation of the MEMS piezoelectric sensor based on AlGaN/GaN heterostructure
Title statement High temperature operation of the MEMS piezoelectric sensor based on AlGaN/GaN heterostructure / aut. Gabriel Vanko, Jaroslav Dzuba, Milan Držík, Vladimír Kutiš, S Kasemann, J Zehetner Main entry-name Vanko, Gabriel (Author) Another responsib. Dzuba, Jaroslav, 1987- (Author) Držík, Milan, 1949- (Author) Kutiš, Vladimír, 1975- Z1 (Author) - FEI Ústav automobilovej mechatroniky Kasemann, S. (Author) Zehetner, J. (Author) In ADEPT 2020 [192 s.] / International conference on Advances in electronic and photonic technologies (Adept 2020). -- Žilina : Vydavateľstvo EDIS, 2020. -- ISBN 978-80-554-1735-6. -- S. 33-36 Subj. Headings III-N heterostructures MEMS piezoelectricity harsh environments pressure sensors high electron mobility transistors Language English Document kind RZB - článok zo zborníka Category AFD - Reports at home scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Year 2020 article
Number of the records: 1