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DLTS study of defect distribution in GaAsN p-i-n structures for solar cells

  1. Title statementDLTS study of defect distribution in GaAsN p-i-n structures for solar cells / aut. Arpád Kósa, Jakub Drobný, Wojciech Dawidowski, Miroslav Mikolášek, Jaroslav jr Kováč, Beata Sciana, Ľubica Stuchlíková
    Main entry-name Kósa, Arpád, 1987- (Author) - FEI Ústav elektroniky a fotoniky
    Another responsib. Drobný, Jakub, 1994- Z3 (Author) - FEI Ústav elektroniky a fotoniky
    Dawidowski, Wojciech (Author)
    Mikolášek, Miroslav, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Kováč, Jaroslav jr. 1977- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Sciana, Beata (Author)
    Stuchlíková, Ľubica, 1967- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    In ADEPT 2020 [192 s.] / International conference on Advances in electronic and photonic technologies (Adept 2020). -- Žilina : Vydavateľstvo EDIS, 2020. -- ISBN 978-80-554-1735-6. -- S. 183-186
    Subj. Headings GaAsN
    defects
    DLTS study
    LanguageEnglish
    Document kindRZB - článok zo zborníka
    CategoryAFD - Reports at home scientific conferences
    Category (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Year2020
    article

    article

Number of the records: 1  

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