Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique

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Title statement	Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique / aut. Juraj Priesol, Alexander Šatka, Aleš Chvála, Steve Stoffels, Brice De Jaeger, Stefaan Decoutere
Main entry-name	Priesol, Juraj, 1986- (Author) - FEI Ústav elektroniky a fotoniky
Another responsib.	Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Stoffels, Steve Z6 (Author)
	De Jaeger, Brice (Author)
	Decoutere, Stefaan Z6 (Author)
In	IEEE Transactions on Electron Devices. -- ISSN 0018-9383. -- Vol. 68, No. 1 (2021), s. 216-221
Subj. Headings	AlGaN/GaN
	electric field
	electrical stress
	EBIC
	Focused Ion Beam
	Scanning electron microscopy
	Schottky diode
	TCAD simulation
Language	English
URL	https://ieeexplore.ieee.org/document/9288930
Document kind	RBX - článok z periodika
Category	ADC - Scientific titles in foreign carented magazines and noticed year-books
Category (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
In databases
Year	2021

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Number of the records: 1