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Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: Role of deep levels

Title statement	Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: Role of deep levels / aut. Roman Stoklas, Aleš Chvála, Peter Šichman, Stanislav Hasenöhrl, Štefan Haščík, Juraj Priesol, Alexander Šatka, Ján Kuzmík
Main entry-name	Stoklas, Roman (Author)
Another responsib.	Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Šichman, Peter (Author)
	Hasenöhrl, Stanislav Z5 (Author)
	Haščík, Štefan Z5 (Author)
	Priesol, Juraj, 1986- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Kuzmík, Ján (Author)
In	IEEE Transactions on Electron Devices. -- ISSN 0018-9383. -- Vol. 68, No. 5 (2021), s. 2365-2371
Subj. Headings	Carrier compensation
	electrical breakdown
	Semi-insulating
	simulation
	space-charge-limited current
	Vertical transistor
Language	English
URL	https://ieeexplore.ieee.org/document/9384237
Document kind	RBX - článok z periodika
Category	ADC - Scientific titles in foreign carented magazines and noticed year-books
Category (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
In databases	CC: 000642766300033 WOS: 000642766300033 DOI: 10.1109/TED.2021.3065893 SCOPUS: 2-s2.0-85103267028
Year	2021

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Number of the records: 1