Number of the records: 1  

Electrically active defects in SiC planar power MOSFET

  1. Title statementElectrically active defects in SiC planar power MOSFET / aut. Jakub Drobný, Juraj Marek, Matej Matúš, Aleš Chvála, Angelo Alberto Messina, Vincenzo Vinciguerra, Ľubica Stuchlíková
    Main entry-name Drobný, Jakub, 1994- (Author) - FEI Ústav elektroniky a fotoniky
    Another responsib. Marek, Juraj, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Matuš, Matej Z4 (Author) - FEI Fakulta elektrotechniky a informatiky
    Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Messina, Angelo Alberto (Author)
    Vinciguerra, Vincenzo (Author)
    Stuchlíková, Ľubica, 1967- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    In SURFINT - SREN VII [79 s.] / Progress in applied surface, interface and thin film science. -- Bratislava : Comenius University, 2021. -- ISBN 978-80-223-5296-3. -- S. 12-13
    LanguageEnglish
    Document kindRZB - článok zo zborníka
    CategoryAFH - Abstractions of scientific titles in year-books from home conferences
    Category (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Year2021
    article

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Number of the records: 1  

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