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Amorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices

  1. Title statementAmorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices / aut. Jozef Huran, Pavol Boháček, Vlasta Sasinková, Angela Kleinová, Miroslav Mikolášek, Alexander P Kobzev
    Main entry-name Huran, Jozef (Author)
    Another responsib. Boháček, Pavol (Author)
    Sasinková, Vlasta (Author)
    Kleinová, Angela (Author)
    Mikolášek, Miroslav, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Kobzev, Alexander P. (Author)
    In Current Applied Physics. -- ISSN 1567-1739. -- Vol. 34, (2022), s. 101-106
    Subj. Headings silicon carbide film
    PECVD
    structural and electrical properties
    Corrosions resistance
    Photoelectrochemical water splitting
    LanguageEnglish
    URLhttps://www.sciencedirect.com/science/article/pii/S1567173921002789#!
    Document kindRZB - článok zo zborníka
    CategoryADC - Scientific titles in foreign carented magazines and noticed year-books
    Category (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    In databases CC: 000788426400007
    WOS: 000788426400007
    DOI: 10.1016/j.cap.2021.11.014
    SCOPUS: 2-s2.0-85121451655
    Year2022
    article

    article

Number of the records: 1  

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