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Electro-thermal simulation analysis and optimization of SiC Power MOSFET under UIS test condition
Title statement Electro-thermal simulation analysis and optimization of SiC Power MOSFET under UIS test condition / aut. Aleš Chvála, Juraj Marek, Jozef Kozárik, Angelo Alberto Messina, Vincenzo Vinciguerra, Daniel Donoval Main entry-name Chvála, Aleš, 1981- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Marek, Juraj, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky Kozárik, Jozef, 1993- Z2 (Author) - FEI Ústav elektroniky a fotoniky Messina, Angelo Alberto (Author) Vinciguerra, Vincenzo (Author) Donoval, Daniel, 1953- Z1 (Author) - FEI Ústav elektroniky a fotoniky In WOCSDICE‐EXMATEC 2022 / Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe. -- Aveiro : Universidade di Aveiro, 2022. -- S. OP102-OP103 Language English Document kind RZB - článok zo zborníka Category BEE - Scientific works in not noticed year-books from international undertakings, foreign year-books Category (from 2022) O2 - Odborný výstup publikačnej činnosti ako časť knižnej publikácie alebo zborníka Type of document príspevok z podujatia Year 2022 
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Number of the records: 1