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Investigation of electrically active defects in quasi-vertical GaN devices for high power applications
Title statement Investigation of electrically active defects in quasi-vertical GaN devices for high power applications / aut. Matej Matuš, Juraj Marek, Jakub Drobný, Karen Geens, Matteo Borga, Hu Liang, Stefaan Decoutere, Herwig Hahn, M Heuken, Ľubica Stuchlíková Main entry-name Matuš, Matej, 1997- (Author) - FEI Fakulta elektrotechniky a informatiky Another responsib. Marek, Juraj, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky Drobný, Jakub, 1994- Z3 (Author) - FEI Ústav elektroniky a fotoniky Geens, Karen (Author) Borga, Matteo (Author) Liang, Hu Z6 (Author) Decoutere, Stefaan Z6 (Author) Hahn, Herwig (Author) Heuken, M. (Author) Stuchlíková, Ľubica, 1967- Z1 (Author) - FEI Ústav elektroniky a fotoniky In ADEPT 2022 [274 s.] / Feiler, Martin. -- Žilina : Vydavateľstvo EDIS, 2022. -- ISBN 978-80-554-1884-1. -- S. 63-66 Subj. Headings quasi-vertical MOSFET GaN electrically active defects DLTFS Language English Document kind RZB - článok zo zborníka Category AFD - Reports at home scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok z podujatia Year 2022 
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Number of the records: 1