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Optimisation of sol-gel copper oxide layers for field-effect transistors

  1. Title statementOptimisation of sol-gel copper oxide layers for field-effect transistors / aut. Tomáš Vincze, Michal Mičjan, Milan Pavúk, Martin Weis
    Main entry-name Vincze, Tomáš, 1995- (Author) - FEI Ústav elektroniky a fotoniky
    Another responsib. Mičjan, Michal, 1991- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Pavúk, Milan, 1980- Z2 (Author) - FEI Ústav jadrového a fyzikálneho inžinierstva
    Weis, Martin, 1980- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Notepreradené na BEE - CVTI 23.4.2024
    In IRC 2022 [130 s.] / International research conference (IRC 2022). -- [s.l.] : WASET, 2022. -- ISSN 1307-6892. -- S. 74-78
    Subj. Headings copper oxide
    field-effect transistors
    semiconductor
    Sol-gel method
    LanguageEnglish
    Document kindRZB - článok zo zborníka
    CategoryBEE - Scientific works in not noticed year-books from international undertakings, foreign year-books
    Category (from 2022)O2 - Odborný výstup publikačnej činnosti ako časť knižnej publikácie alebo zborníka
    Type of documentpríspevok z podujatia
    Year2022
    article

    article

Number of the records: 1  

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