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Transport properties of Si-doped β-Ga2O3 grown by liquid-injection MOCVD
Title statement Transport properties of Si-doped β-Ga2O3 grown by liquid-injection MOCVD / aut. Fridrich Egyenes, Filip Gucmann, Edmund Dobročka, Miroslav Mikolášek, Kristína Hušeková, Milan Ťapajna Main entry-name Egyenes, Fridrich (Author) Another responsib. Gucmann, Filip, 1987- (Author) Dobročka, Edmund, 1955- Z5 (Author) Mikolášek, Miroslav, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky Hušeková, Kristína (Author) Ťapajna, Milan, 1977- (Author) In ASDAM 2022 [254 s.] / International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2022). -- Danvers : IEEE, 2022. -- ISBN 978-1-6654-6977-7. -- S. 119-122 Language English URL https://ieeexplore.ieee.org/document/9966793 Document kind RZB - článok zo zborníka Category AFD - Reports at home scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok z podujatia In databases DOI: 10.1109/ASDAM55965.2022.9966793
SCOPUS: 2-s2.0-85144592663Year 2022 
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Number of the records: 1