Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD

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Title statement	Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD / aut. Filip Gucmann, Peter Nádaždy, Kristína Hušeková, Edmund Dobročka, Juraj Priesol, Fridrich Egyenes, Alexander Šatka, Alica Rosová, Milan Ťapajna
Main entry-name	Gucmann, Filip, 1987- (Author)
Another responsib.	Nádaždy, Peter Z5 (Author)
	Hušeková, Kristína (Author)
	Dobročka, Edmund, 1955- Z5 (Author)
	Priesol, Juraj, 1986- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Egyenes, Fridrich (Author)
	Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Rosová, Alica (Author)
	Ťapajna, Milan, 1977- (Author)
In	Materials Science in Semiconductor Processing. -- ISSN 1369-8001. -- Vol. 156, (2023), Art. no. 107289 [9] s.
Subj. Headings	Ga2O3
	Gallium oxide
	thermal stability
	MOCVD
	degradation
Language	English
URL	https://www.sciencedirect.com/science/article/pii/S1369800122008162
Document kind	RBX - článok z periodika
Category	ADC - Scientific titles in foreign carented magazines and noticed year-books
Category (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
In databases
Year	2023

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Number of the records: 1