- Creation of thin Ga2Se3 PN junction during the PtSe2 preparation
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Creation of thin Ga2Se3 PN junction during the PtSe2 preparation

  1. Title statementCreation of thin Ga2Se3 PN junction during the PtSe2 preparation / aut. Jozef Novák, Stanislav Hasenöhrl, Michaela Sojková, Alica Rosová, Edmund Dobročka, Jaroslav jr Kováč, Jaroslav Kováč, Ivana Lettrichová, Dušan Pudiš
    Main entry-name Novák, Jozef, 1951 (Author)
    Another responsib. Rosová, Alica (Author)
    Hasenöhrl, Stanislav Z5 (Author)
    Sojková, Michaela (Author)
    Dobročka, Edmund, 1955- Z5 (Author)
    Kováč, Jaroslav jr. 1977- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Kováč, Jaroslav, 1947- Z8 (Author) - FEI Ústav elektroniky a fotoniky
    Lettrichová, Ivana Z5 (Author)
    Pudiš, Dušan Z5 (Author)
    In WOCSDICE-EXMATEC 2024 [165 s.] / Workshop on compound semiconductor devices and integrated circuits held in Europe (Wocsdice 2024). -- Heraklion Crete : MITOS, 2024. -- [2] s.
    LanguageEnglish
    Document kindRZB - článok zo zborníka
    CategoryBEE - Scientific works in not noticed year-books from international undertakings, foreign year-books
    Category (from 2022)O2 - Odborný výstup publikačnej činnosti ako časť knižnej publikácie alebo zborníka
    Type of documentpríspevok z podujatia
    Year2024
    article

    article

Number of the records: 1  

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