Impact of Indium Content on Defect Distribution in InGaN/GaN QW Structures

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Title statement	Impact of Indium Content on Defect Distribution in InGaN/GaN QW Structures / aut. Matej Matuš, Ľubica Stuchlíková, Dagmar Gregušová, M Morales, Martin Weis, Juraj Marek, P Ruterana
Main entry-name	Matuš, Matej, 1997- (Author) - FEI Ústav elektroniky a fotoniky
Another responsib.	Stuchlíková, Ľubica, 1967- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Gregušová, Dagmar (Author)
	Morales, Magali (Author)
	Weis, Martin, 1980- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Marek, Juraj, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Ruterana, Pierre (Author)
In	ASDAM 2024 [87 s.] / International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2024). -- Danvers : IEEE, 2024. -- ISBN 979-8-3315-4060-9. -- ISSN 2474-9737. -- S. 38-41
Language	English
URL	https://ieeexplore.ieee.org/document/10844677
Document kind	RZB - článok zo zborníka
Category	AFD - Reports at home scientific conferences
Category (from 2022)	V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
Type of document	príspevok z podujatia
In databases
Year	2025

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Number of the records: 1