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Impact of Indium Content on Defect Distribution in InGaN/GaN QW Structures
Title statement Impact of Indium Content on Defect Distribution in InGaN/GaN QW Structures / aut. Matej Matuš, Ľubica Stuchlíková, Dagmar Gregušová, M Morales, Martin Weis, Juraj Marek, P Ruterana Main entry-name Matuš, Matej, 1997- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Stuchlíková, Ľubica, 1967- Z1 (Author) - FEI Ústav elektroniky a fotoniky Gregušová, Dagmar (Author) Morales, Magali (Author) Weis, Martin, 1980- Z1 (Author) - FEI Ústav elektroniky a fotoniky Marek, Juraj, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky Ruterana, Pierre (Author) In ASDAM 2024 [87 s.] / International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2024). -- Danvers : IEEE, 2024. -- ISBN 979-8-3315-4060-9. -- ISSN 2474-9737. -- S. 38-41 Language English URL https://ieeexplore.ieee.org/document/10844677 Document kind RZB - článok zo zborníka Category AFD - Reports at home scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok z podujatia In databases WOS: 001447859500010
DOI: 10.1109/ASDAM63148.2024.10844677
SCOPUS: 2-s2.0-105001917756Year 2025 article
Number of the records: 1