DLTFS Study of Monolithically Integrated GaN-on-Si Power Transistor for High Power Applications

Number of the records: 1

Title statement	DLTFS Study of Monolithically Integrated GaN-on-Si Power Transistor for High Power Applications / aut. Matej Matuš, Juraj Marek, Aleš Chvála, B Bakeroot, K Geens, Ľubica Stuchlíková
Main entry-name	Matuš, Matej, 1997- (Author) - FEI Ústav elektroniky a fotoniky
Another responsib.	Marek, Juraj, 1983- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Chvála, Aleš, 1981- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Bakeroot, Benoit (Author)
	Geens, Karen (Author)
	Stuchlíková, Ľubica, 1967- Z1 (Author) - FEI Ústav elektroniky a fotoniky
In	ASDAM 2024 [87 s.] / International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2024). -- Danvers : IEEE, 2024. -- ISBN 979-8-3315-4060-9. -- ISSN 2474-9737. -- S. 42-45
Language	English
URL	https://ieeexplore.ieee.org/document/10844616
Document kind	RZB - článok zo zborníka
Category	AFD - Reports at home scientific conferences
Category (from 2022)	V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
Type of document	príspevok z podujatia
In databases
Year	2025

article

citace PRO

Number of the records: 1