Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment

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Title statement	Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment / aut. Roman Stoklas, Stanislav Hasenöhrl, Dagmar Gregušová, Edmund Dobročka, Filip Gucmann, Peter Eliáš, Alica Rosová, Matej Mičušík, Šimon Chrobák, Jan Kuzmík
Main entry-name	Stoklas, Roman (Author)
Another responsib.	Hasenöhrl, Stanislav Z5 (Author)
	Gregušová, Dagmar (Author)
	Dobročka, Edmund, 1955- Z5 (Author)
	Gucmann, Filip, 1987- (Author)
	Eliáš, Peter (Author)
	Rosová, Alica (Author)
	Mičušík, Matej, 1977- (Author)
	Chrobák, Šimon (Author)
	Kuzmík, Jan (Author)
In	ASDAM 2024 [87 s.] / International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2024). -- Danvers : IEEE, 2024. -- ISBN 979-8-3315-4060-9. -- ISSN 2474-9737. -- S. 50-53
Language	English
Document kind	RZB - článok zo zborníka
Category	AFD - Reports at home scientific conferences
Category (from 2022)	V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
Type of document	príspevok z podujatia
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Year	2025

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Number of the records: 1