- Structural characterization of twinning in β-Ga2O3 filament inclusion…
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Structural characterization of twinning in β-Ga2O3 filament inclusions on Ga2O3 thin films epitaxially grown on sapphire substrates by MOCVD

  1. Title statementStructural characterization of twinning in β-Ga2O3 filament inclusions on Ga2O3 thin films epitaxially grown on sapphire substrates by MOCVD / aut. Roshan Jeevan Chidambaram, Alica Rosová, Edmund Dobročka, Kristína Hušeková, Milan Ťapajna, Filip Gucmann
    Main entry-name Chidambaram, Roshan Jeevan (Author) - FEI Ústav jadrového a fyzikálneho inžinierstva
    Another responsib. Rosová, Alica (Author)
    Dobročka, Edmund, 1955- Z5 (Author)
    Hušeková, Kristína (Author)
    Ťapajna, Milan, 1977- (Author)
    Gucmann, Filip, 1987- (Author)
    In ELITECH´25 [CD ROM, 208 s.] / Kozáková, Alena. -- Bratislava : Vydavateľstvo Spektrum STU, 2025. -- ISBN 978-80-227-5492-7. -- [5] s.
    Subj. Headings Gallium oxide
    Epitaxy
    twinning
    m-plane sapphire
    LanguageEnglish
    Document kindRZB - článok zo zborníka
    CategoryAFD - Reports at home scientific conferences
    Category (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok z podujatia
    Year2025
    article

    article

Number of the records: 1  

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