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A New Model of Charge Transport in Very Thin MIS Structures by Indirect Tunnelling via Insulator-to-Semiconductor Interface Traps
Title statement A New Model of Charge Transport in Very Thin MIS Structures by Indirect Tunnelling via Insulator-to-Semiconductor Interface Traps Main entry-name Racko, Juraj, 1953- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Benko, Peter, 1981- (Author) - FEI Ústav elektroniky a fotoniky Donoval, Daniel, 1953- (Author) - FEI Ústav elektroniky a fotoniky Harmatha, Ladislav, 1948- (Author) - FEI Ústav elektroniky a fotoniky Grmanová, Alena, 1955- (Author) - FEI Ústav elektroniky a fotoniky Ďuračková, Daniela, 1950- (Author) - FEI Ústav elektroniky a fotoniky Valent, Peter, 1979- (Author) - FEI Katedra mikroelektroniky Breza, Juraj, 1951- (Author) - FEI Ústav elektroniky a fotoniky In EDS´08. Electronic Devices and Systems IMAPS CS International Conference 2008 : Brno, Czech Republic, 10.-11.9.2008. -- Brno : VUT v Brně, 2008. -- ISBN 978-80-214-3717-3. -- s.132-137 Language English Document kind RZB - článok zo zborníka Category AFC - Reports at international scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Year 2008 
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Number of the records: 1