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Simulated Properties of LňFloating Gate Transistor for Memory Applications
Title statement Simulated Properties of LňFloating Gate Transistor for Memory Applications Main entry-name Krajmer, Mario, 1985- (Author) - FEI Katedra mikroelektroniky Another responsib. Ďuračková, Daniela, 1950- (Author) - FEI Ústav elektroniky a fotoniky Racko, Juraj, 1953- (Author) - FEI Ústav elektroniky a fotoniky In ELITECH´10 : 12th Conference of Doctoral Students. Bratislava, Slovak Republic, 26.5.2010. -- Bratislava : STU v Bratislave, 2010. -- ISBN 978-80-227-3303-8. -- s.CD-Rom Language English Document kind RZB - článok zo zborníka Category AFD - Reports at home scientific conferences Category (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Year 2010 
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