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Light-emitting devices based on ultra-thin GaAs layers in active MQW region = Emitujúce prvky na báze ultratenkých GaAs vrstiev v aktívnej MQW oblasti

  1. Title statementLight-emitting devices based on ultra-thin GaAs layers in active MQW region = Emitujúce prvky na báze ultratenkých GaAs vrstiev v aktívnej MQW oblasti : V.odb. 26-13-9. Obhajoba 20.12.2000
    Main entry-name Pudiš, Dušan (Author)
    Another responsib. Kováč, Jaroslav, 1947- (Thesis advisor) - FEI Ústav elektroniky a fotoniky
    Issue dataBratislava : STU v Bratislave FEI, 2000
    FacultyFEI
    Phys.des.107 s
    Subj. Headings elektronika
    optoelektronika
    fyzika polovodičov
    polovodičové štruktúry
    polovodičové materiály
    LED
    GaAs
    UDC538.971
    621.315.592
    LanguageEnglish
    Document kindDDZ - dizertačná práca
    CategoryDAI - Qualificational works (thesis, habilitation, atestation...)
    book

    book

    BarcodeCall number of locationCall numberLocationSublocationInfo
    284ED00047E*PGŠ-807Fakulta elektrotechniky a informatikyKnižnica FEI

Number of the records: 1  

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