- AlGaN/GaN HEMT channel temperature determination utilizing external h…
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AlGaN/GaN HEMT channel temperature determination utilizing external heater

  1. Title statementAlGaN/GaN HEMT channel temperature determination utilizing external heater / aut. Martin Florovič, Robert Szobolovszký, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
    Main entry-name Florovič, Martin, 1978- (Author) - FEI Ústav elektroniky a fotoniky
    Another responsib. Szobolovszký, Robert, 1990- (Author)
    Kováč, Jaroslav jr. 1977- Z1 (Author) - FEI Ústav elektroniky a fotoniky
    Kováč, Jaroslav, 1947- Z8 (Author) - FEI Ústav elektroniky a fotoniky
    Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Jacquet, Jean-Claude Z6 (Author)
    Delage, Sylvain Laurent Z6 (Author)
    In Semiconductor Science and Technology. -- ISSN 0268-1242. -- Vol. 35, No. 2 (2020), Art. no. 025006 [6] s.
    Subj. Headings dissipated power
    temperature profile
    HEMT
    FET
    GaN
    AlGaN
    LanguageEnglish
    URLhttps://iopscience.iop.org/article/10.1088/1361-6641/ab5d85
    Document kindRBX - článok z periodika
    CategoryADC - Scientific titles in foreign carented magazines and noticed year-books
    Category (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    In databases
    Year2020
    References (1) - článok
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Number of the records: 1  

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