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AlGaN/GaN HEMT channel temperature determination utilizing external heater
Title statement AlGaN/GaN HEMT channel temperature determination utilizing external heater / aut. Martin Florovič, Robert Szobolovszký, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage Main entry-name Florovič, Martin, 1978- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Szobolovszký, Robert, 1990- (Author) Kováč, Jaroslav jr. 1977- Z1 (Author) - FEI Ústav elektroniky a fotoniky Kováč, Jaroslav, 1947- Z8 (Author) - FEI Ústav elektroniky a fotoniky Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky Jacquet, Jean-Claude Z6 (Author) Delage, Sylvain Laurent Z6 (Author) In Semiconductor Science and Technology. -- ISSN 0268-1242. -- Vol. 35, No. 2 (2020), Art. no. 025006 [6] s. Subj. Headings dissipated power temperature profile HEMT FET GaN AlGaN Language English URL https://iopscience.iop.org/article/10.1088/1361-6641/ab5d85 Document kind RBX - článok z periodika Category ADC - Scientific titles in foreign carented magazines and noticed year-books Category (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu In databases CC: 000526390200006
DOI: 10.1088/1361-6641/ab5d85
SCOPUS: 2-s2.0-85082241116Year 2020 References (1) - článok article
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