- Amorphous silicon carbide thin films doped with P or B for the photoe…
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Amorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices

  1. silicon carbide film. PECVD. structural and electrical properties. Corrosions resistance. Photoelectrochemical water splittingHuran, Jozef Amorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices / aut. Jozef Huran, Pavol Boháček, Vlasta Sasinková, Angela Kleinová, Miroslav Mikolášek, Alexander P Kobzev. -- 10.1016/j.cap.2021.11.014. -- 2-s2.0-85121451655. -- 000788426400007. -- 000788426400007. Boháček, Pavol. Sasinková, Vlasta. Kleinová, Angela. Mikolášek, Miroslav, 1983-. Kobzev, Alexander P In: Current Applied Physics. -- ISSN 1567-1739. -- Vol. 34, (2022), s. 101-106.
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