GaN. Vertical transistor. Semi-insulatingŠichman, Peter Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure / aut. Peter Šichman, Stanislav Hasenöhrl, Roman Stoklas, Juraj Priesol, Edmund Dobročka, Štefan Haščík, Filip Gucmann, Andrej Vincze, Aleš Chvála, Juraj Marek, Alexander Šatka, Ján Kuzmík. -- 10.1016/j.mssp.2020.105203. -- 000552273500002. -- 2-s2.0-85086373675. Hasenöhrl, Stanislav. Stoklas, Roman. Priesol, Juraj, 1986-. Dobročka, Edmund, 1955-. Haščík, Štefan. Gucmann, Filip, 1987-. Vincze, Andrej, 1975-. Chvála, Aleš, 1981-. Marek, Juraj, 1983-. Šatka, Alexander, 1960-. Kuzmík, Ján In: Materials Science in Semiconductor Processing. -- ISSN 1369-8001. -- Vol. 118, (2020), Art. no. 105203 [5] s.