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AlGaN/GaN HEMT channel temperature determination utilizing external heater
Title statement AlGaN/GaN HEMT channel temperature determination utilizing external heater / aut. Martin Florovič, Robert Szobolovszký, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage Main entry-name Florovič, Martin, 1978- (Author) - FEI Ústav elektroniky a fotoniky Another responsib. Szobolovszký, Robert, 1990- (Author) Kováč, Jaroslav jr. 1977- Z1 (Author) - FEI Ústav elektroniky a fotoniky Kováč, Jaroslav, 1947- Z8 (Author) - FEI Ústav elektroniky a fotoniky Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky Jacquet, Jean-Claude Z6 (Author) Delage, Sylvain Laurent Z6 (Author) In Semiconductor Science and Technology. -- ISSN 0268-1242. -- Vol. 35, No. 2 (2020), Art. no. 025006 [6] s. Subj. Headings dissipated power temperature profile HEMT FET GaN AlGaN Language English Document kind RBX - článok z periodika Category ADC - Scientific titles in foreign carented magazines and noticed year-books Category (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Year 2020 References (1) - článok 2022 CHAKRABORTY, Surajit - AMIR, Walid - SHIN, Ju Won - SHIN, Ki Yong - CHO, Chu Young - KIM, Jae Moo - HOSHI, Takuya - TSUTSUMI, Takuya - SUGIYAMA, Hiroki - MATSUZAKI, Hideaki - KWON, Hyuk Min - KIM, Dae Hyun - KIM, Tae Woo. Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity. In: Materials, 2022-12-01, 15, 23, pp. 2024: LIU, Yan - CHEN, Simin - MA, Xuetiao - CHENG, Zhiqun - WANG, Tao. Gate Length Influence on the Strain of the AlGaN Barrier Layer under the Gate in AlGaN/AlN/GaN HFETs at Different Temperatures. In: SEMICONDUCTORS, 2024, vol. 58, no. 8, pp. 645-650. ISSN 1063-7826. 
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