Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure /

Šichman, Peter; Hasenöhrl, Stanislav; Stoklas, Roman; Priesol, Juraj; Dobročka, Edmund; Haščík, Štefan; Gucmann, Filip; Vincze, Andrej; Chvála, Aleš; Marek, Juraj; Šatka, Alexander; Kuzmík, Ján

doi:https://dx.doi.org/10.1016/j.mssp.2020.105203

Number of the records: 1

Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Title statement	Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure / aut. Peter Šichman, Stanislav Hasenöhrl, Roman Stoklas, Juraj Priesol, Edmund Dobročka, Štefan Haščík, Filip Gucmann, Andrej Vincze, Aleš Chvála, Juraj Marek, Alexander Šatka, Ján Kuzmík
Main entry-name	Šichman, Peter (Author)
Another responsib.	Hasenöhrl, Stanislav Z5 (Author)
	Stoklas, Roman (Author)
	Priesol, Juraj, 1986- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Dobročka, Edmund, 1955- Z5 (Author)
	Haščík, Štefan Z5 (Author)
	Gucmann, Filip, 1987- (Author)
	Vincze, Andrej, 1975- (Author)
	Chvála, Aleš, 1981- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Marek, Juraj, 1983- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Šatka, Alexander, 1960- Z1 (Author) - FEI Ústav elektroniky a fotoniky
	Kuzmík, Ján (Author)
In	Materials Science in Semiconductor Processing. -- ISSN 1369-8001. -- Vol. 118, (2020), Art. no. 105203 [5] s.
Subj. Headings	GaN
	Vertical transistor
	Semi-insulating
Language	English
Document kind	RBX - článok z periodika
Category	ADC - Scientific titles in foreign carented magazines and noticed year-books
Category (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Year	2020
Citations	[1] 2021: MOCHIZUKI, Kazuhiro - HORIKIRI, Fumimasa - OHTA, Hiroshi - MISHIMA, Tomoyoshi. Step-edge segregation model for step-velocity dependences of carbon and oxygen concentrations in GaN layers grown on m-plane GaN. In JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, vol. 60, no. 1, pp. ISSN 0021-4922.
	[1] 2021: PAN, Yong. Influence of N-vacancy on the electronic and optical properties of bulk GaN from first-principles investigations. In INTERNATIONAL JOURNAL OF ENERGY RESEARCH, 2021, vol., no., pp. ISSN 0363-907X.
	2023: QIN, Yuan - ALBANO, Benjamin - SPENCER, Joseph - LUNDH, James Spencer - WANG, Boyan - BUTTAY, Cyril - TADJER, Marko - DIMARINO, Christina - ZHANG, Yuhao. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, vol. 56, no. 9, pp. ISSN 0022-3727.
	2023: HRUBISAK, Fedor - HUSEKOVA, Kristina - ZHENG, Xiang - ROSOVA, Alica - DOBROCKA, Edmund - TAPAJNA, Milan - MICUSIK, Matej - NADAZDY, Peter - EGYENES, Fridrich - KESHTKAR, Javad - KOVACOVA, Eva - POMEROY, James W. - KUBALL, Martin - GUCMANN, Filip. Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, vol. 41, no. 4, art. no. 042708. ISSN 0734-2101.
	2024: WOO, Kelly - BIAN, Zhengliang - NOSHIN, Maliha - PEREZ MARTINEZ, Rafael - MALAKOUTIAN, Mohamadali - SHANKAR, Bhawani - CHOWDHURY, Srabanti. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices. In: Journal of Physical Materials, 2024, vol. 7, no. 2, art. no. 022003. ISSN 2515-7639.

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Number of the records: 1