1. Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
Title information : Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
Variant heading : \q12*stu_us_auth*1 stu59072 \q \q1013 stu_us_auth*stu59072 \d Mikolášek Miroslav \q ; E030
%continue : \q12*stu_us_auth*1 stu35674 \q \q1013 stu_us_auth*stu35674 \d Stuchlíková Ľubica \q ; E030 \q12*stu_us_auth*1 stu8839 \q \q1013 stu_us_auth*stu8839 \d Harmatha Ladislav \q ; E030 \q12*stu_us_auth*1 stu34909 \q \q1013 stu_us_auth*stu34909 \d Vincze Andrej \q \q12*stu_us_auth*1 stu77617 \q \q1013 stu_us_auth*stu77617 \d Nemec Michal \q ; E030 \q12*stu_us_auth*1 stu6992 \q \q1013 stu_us_auth*stu6992 \d Racko Juraj \q ; E030 \q12*stu_us_auth*1 stu7682 \q \q1013 stu_us_auth*stu7682 \d Breza Juraj \q ; E030
In : \q12**1 stu294731 \q
%continue : Applied Surface Science
%continue : . Vol. 312 (2014), s. 152-156
Document kind : článok z periodika
Category : ADC - Scientific titles in foreign carented magazines and noticed year-books
Category (from 2022) : V3 - Vedecký výstup publikačnej činnosti z časopisu