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- Optimisation of sol-gel copper oxide layers for field-effect transistors / aut. Tomáš Vincze, Michal Mičjan, Milan Pavúk, Martin Weis
Vincze Tomáš ; 033000 Mičjan Michal ; 033000 Pavúk Milan ; 036000 Weis Martin ; 033000
IRC 2022 : . S. 74-78
copper oxide field-effect transistors semiconductor Sol-gel method
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AFC - Reports at international scientific conferences
V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
article
- Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor / aut. Martin Florovič, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Martin Weis, Jean-Claude Jacquet, Sylvain Laurent Delage
Florovič Martin ; 033000 Kováč Jaroslav jr. ; 033000 Kováč Jaroslav ; 033000 Chvála Aleš ; 033000 Weis Martin ; 033000 Jacquet Jean-Claude Delage Sylvain Laurent
Semiconductor Science and Technology . Vol. 36, No. 2 (2021), Art. no. 025019 [9] s.
Gallium Nitride field-effect transistor High electron mobility transistor average temperature thermal resistance
článok z periodika
ADC - Scientific titles in foreign carented magazines and noticed year-books
V3 - Vedecký výstup publikačnej činnosti z časopisuarticle
- Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors / aut. Martin Florovič, Roman Stoklas, Jaroslav jr Kováč, Peter Kordoš
Florovič Martin ; 033000 Stoklas Roman Kováč Jaroslav jr. ; 033000 Kordoš Peter ; 033000
Semiconductor Science and Technology . Vol. 32, No. 2 (2017), Art. no. 025017 [5] s.
GaN field-effect transistors threshold voltage
článok z periodika
ADC - Scientific titles in foreign carented magazines and noticed year-books
V3 - Vedecký výstup publikačnej činnosti z časopisuarticle