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  1. Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations / aut. Aleš Chvála, Lukáš Nagy, Juraj Marek, Juraj Priesol, Daniel Donoval, Michal Blaho, Michal Blaho, Dagmar Gregušová, Ján Kuzmík, Alexander Šatka
    Chvála Aleš ; 033000  Nagy Lukáš ; 033000 Marek Juraj ; 033000 Priesol Juraj ; 033000 Donoval Daniel ; 033000 Blaho Michal Gregušová Dagmar Kuzmík Ján Šatka Alexander ; 033000
    IEEE Transactions on Electron Devices . Vol. 65, No. 6 (2018), s. 2666-2669
    Circuit and device simulations InAlN/GaN HEMT monolithic integration NAND logic cell
    https://ieeexplore.ieee.org/document/8352764/
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
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