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Your query: Author Sysno = "^stu_us_auth 0042580^"
  1. Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability / aut. Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea N Tallarico, Enrico C Sangiorgi, Claudio Fiegna, J Zheng, X Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Šatka
    Stoffels Steve  Posthuma Niels Decoutere Stefaan Bakeroot Benoit Tallarico Andrea N. Sangiorgi Enrico C. Fiegna Claudio Zheng J. Ma X. Borga Matteo Fabris Elena Meneghini Matteo Zanoni Enrico Meneghesso Gaudenzio Priesol Juraj ; 033000 Šatka Alexander ; 033000
    2019 IEEE International Reliability Physics Symposium : . Art. no. 8720411 [10] s.
    p-GaN gate sidewall TDDB gate leakage lifetime EBIC
    článok zo zborníka
    AFC - Reports at international scientific conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
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