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- Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability / aut. Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea N Tallarico, Enrico C Sangiorgi, Claudio Fiegna, J Zheng, X Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Šatka
Stoffels Steve Posthuma Niels Decoutere Stefaan Bakeroot Benoit Tallarico Andrea N. Sangiorgi Enrico C. Fiegna Claudio Zheng J. Ma X. Borga Matteo Fabris Elena Meneghini Matteo Zanoni Enrico Meneghesso Gaudenzio Priesol Juraj ; 033000 Šatka Alexander ; 033000
2019 IEEE International Reliability Physics Symposium : . Art. no. 8720411 [10] s.
p-GaN gate sidewall TDDB gate leakage lifetime EBIC
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