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Records found: 24  
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  1. 1.Izolačné vlastnosti a prieraz hradlového oxidu štruktúry MOS

    Izolačné vlastnosti a prieraz hradlového oxidu štruktúry MOS : Dát. obhaj. 25.02.2010, č. ved. odb. 26-13-9
    Valent Peter ; E210  Harmatha Ladislav (Thesis advisor) ; E030
    Bratislava : STU v Bratislave FEI, 2009 . - 94 s
    elektronika izolačné vlastnosti MOS štruktúry prierazné napätie
    dizertačná práca
    DAI - Qualificational works (thesis, habilitation, atestation...)
    Faculty Available Inaccesible Issued For Request Only
    FEI1000
    book

    book

  2. 2.Preparation and Properties of Thin Parylene Layers as the Gate Dielectrics for Organic Field Effect Transistors

    Preparation and Properties of Thin Parylene Layers as the Gate Dielectrics for Organic Field Effect Transistors
    Jakabovič Ján ; E030  Kováč Jaroslav ; E030 Weis Martin ; E150 Haško Daniel Srnánek Rudolf ; E030 Valent Peter ; E210 Resel Roland
    Microelectronics Journal . Vol. 40 (2009), s.595-597
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
    article

    article

  3. 3.Unified Tunnelling-Diffusion Theory for Schottky and Very Thin MOS Structures

    Unified Tunnelling-Diffusion Theory for Schottky and Very Thin MOS Structures
    Racko Juraj ; E030  Valent Peter ; E210 Benko Peter ; E030 Donoval Daniel ; E030 Harmatha Ladislav ; E030 Pinteš Peter ; E210 Breza Juraj ; E030
    Solid-State Electronics . Vol. 52 (2008), s.1755-1765
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
    article

    article

  4. 4.A New Model of Charge Transport in Very Thin MIS Structures by Indirect Tunnelling via Insulator-to-Semiconductor Interface Traps

    A New Model of Charge Transport in Very Thin MIS Structures by Indirect Tunnelling via Insulator-to-Semiconductor Interface Traps
    Racko Juraj ; E030  Benko Peter ; E030 Donoval Daniel ; E030 Harmatha Ladislav ; E030 Grmanová Alena ; E030 Ďuračková Daniela ; E030 Valent Peter ; E210 Breza Juraj ; E030
    EDS´08. Electronic Devices and Systems IMAPS CS International Conference 2008 : . s.132-137
    článok zo zborníka
    AFC - Reports at international scientific conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    article

    article

  5. 5.Model of Indirect Tunneling via Insulator-to-Semiconductor Interface Traps in Very Thin MIS Structures

    Model of Indirect Tunneling via Insulator-to-Semiconductor Interface Traps in Very Thin MIS Structures
    Racko Juraj ; E030  Valent Peter ; E210 Benko Peter ; E030 Breza Juraj ; E030 Harmatha Ladislav ; E030 Grmanová Alena ; E030 Donoval Daniel ; E030
    APCOM 2008. Applied Physics of Condensed Matter : . s.187-190
    článok zo zborníka
    AFD - Reports at home scientific conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    article

    article

  6. 6.Preparation and Properties of Thin Parylene Layers as the Gate Dielectrics for Organic Field Effect Transistors

    Preparation and Properties of Thin Parylene Layers as the Gate Dielectrics for Organic Field Effect Transistors
    Jakabovič Ján ; E030  Kováč Jaroslav ; E030 Weis Martin ; E150 Haško Daniel Valent Peter ; E210 Resel Roland
    Workshop on Recent Advances of Low Dimensional Structures and Devices : . s.74
    článok zo zborníka
    AFG - Abstractions of scientific titles in year-books from international conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    article

    article

  7. 7.Comparative Study of Electrical Properties of Nano to Polycrystalline Diamond Films

    Comparative Study of Electrical Properties of Nano to Polycrystalline Diamond Films
    Vojs Marian ; E030  Kromka Alexander ; E030 Ižák Tibor Škriniarová Jaroslava ; E030 Novotný Ivan ; E030 Valent Peter ; E210 Michalka Miroslav Kováčik Tomáš ; E Veselý Marián ; E030
    Journal of Physics: Conference Series : . Vol. 100 (2008), s.052097
    článok z periodika
    AFC - Reports at international scientific conferences
    V3 - Vedecký výstup publikačnej činnosti z časopisu
    article

    article

  8. 8.Electrical Properties of Ru/HfO2/SiO2/Si(n) MOS Structure

    Electrical Properties of Ru/HfO2/SiO2/Si(n) MOS Structure
    Valent Peter ; E210  Racko Juraj ; E030 Pinteš Peter ; E210 Donoval Daniel ; E030 Breza Juraj ; E030 Benko Peter ; E030 Harmatha Ladislav ; E030
    APCOM 2007. Applied Physics of Condensed Matter : . s.165-170
    článok zo zborníka
    AFD - Reports at home scientific conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    article

    article

  9. 9.Measurement of the Electric Breakdown of MOS Structures with Thin High-k Dielectric Layers

    Measurement of the Electric Breakdown of MOS Structures with Thin High-k Dielectric Layers
    Valent Peter ; E210  Valkay Gabriel ; E Harmatha Ladislav ; E030 Písečný Pavol Racko Juraj ; E030
    Measurement 2007 : . s.279-282
    článok zo zborníka
    AFD - Reports at home scientific conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    article

    article

  10. 10.Comparative Study of Electrical Properties of Nano and Micro Crystalline Diamond Films

    Comparative Study of Electrical Properties of Nano and Micro Crystalline Diamond Films
    Vojs Marian ; E030  Kromka Alexander ; E030 Ižák Tibor Škriniarová Jaroslava ; E030 Novotný Ivan ; E030 Valent Peter ; E210 Michalka Miroslav Kováčik Tomáš ; E Veselý Marián ; E030
    APCOM 2007. Applied Physics of Condensed Matter : . s.80-83
    článok zo zborníka
    AFD - Reports at home scientific conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    article

    article