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  1. Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition / aut. A Mošková, M Moško, Marián Precner, Miroslav Mikolášek, Alica Rosová, M Mičušík, Vladimír Štrbík, J Šoltýs, Filip Gucmann, Edmund Dobročka, Karol Fröhlich
    Mošková A.  Moško M. Precner Marián Mikolášek Miroslav ; 033000 Rosová Alica Mičušík M. Štrbík Vladimír Šoltýs J. Gucmann Filip Dobročka Edmund Fröhlich Karol
    Journal of Applied Physics . Vol. 130, iss. 3 (2021), Art. no. 035106 [] s.
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  2. Growth of PtSe2 few-layer films on NbN superconducting substrate / aut. Michaela Sojková, Jana Hrdá, Serhii Volkov, Karol Végsö, Ashin Shaji, Tatiana Vojteková, Lenka Pribusova Slusna, Norbert Gál, Edmund Dobročka, Peter Šiffalovič, Tomáš Roch, Maroš Gregor, Martin Hulman
    Sojková Michaela  Hrdá Jana ; 036000 Volkov Serhii Végsö Karol Shaji Ashin Vojteková Tatiana Pribusova Slusna Lenka Gál Norbert Dobročka Edmund Šiffalovič Peter Roch Tomáš Gregor Maroš Hulman Martin
    Applied Physics Letters . Vol. 119, (2021), Art. no. 013101 [6] s.
    https://aip.scitation.org/doi/10.1063/5.0053309
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  3. Tuning the charge carrier mobility in few-layer PtSe2 films by Se : Pt ratio / aut. Jana Hrdá, Valéria Tašková, Tatiana Vojteková, Lenka Pribusová Slušná, Edmund Dobročka, Igor Píš, Federica Bondino, Martin Hulman, Michaela Sojková
    Hrdá Jana ; 036000  Tašková Valéria ; 030000 Vojteková Tatiana Pribusová Slušná Lenka Dobročka Edmund Píš Igor Bondino Federica Hulman Martin Sojková Michaela
    RSC Advances . Vol. 11, iss. 44 (2021), s. 27292-27297
    https://pubs.rsc.org/en/content/articlelanding/2021/ra/d1ra04507e
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  4. Electrocatalytic properties of pulse plated Ni-W alloy coatings in alkaline electrolytes / aut. Maroš Ábel, Jana Záchenská, Edmund Dobročka, Matilda Zemanová
    Ábel Maroš  Záchenská Jana ; 042120 Dobročka Edmund Zemanová Matilda ; 042120
    Transactions of the Institute of Metal Finishing . Vol. 99, iss. 1 (2021), s. 23-28
    https://www.tandfonline.com/doi/abs/10.1080/00202967.2020.1841453
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  5. The effect of YB4 addition in ZrB2-SiC composites on the mechanical properties and oxidation performance tested up to 2000 degrees C / aut. Zuzana Kováčová, Ľubomír Orovčík, Jaroslav Sedláček, Ľuboš Bača, Edmund Dobročka, Michael Kitzmantel, Erich Neubauer
    Kováčová Zuzana ; 042110  Orovčík Ľubomír Sedláček Jaroslav Bača Ľuboš ; 042110 Dobročka Edmund Kitzmantel Michael Neubauer Erich
    Journal of the European Ceramic Society . Vol. 40, iss. 12 (2020), s. 3829-3843
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  6. A facile conversion of furfural to novel tetrahydrofurfuryl hemiacetals / aut. Milan Hronec, Katarína Fulajtárová, Blažej Horváth, Tibor Liptaj, Edmund Dobročka
    Hronec Milan ; 048130  Fulajtárová Katarína ; 048130 Horváth Blažej ; 048130 Liptaj Tibor ; 040630 Dobročka Edmund
    Applied Catalysis A: General . Vol. 594, (2020), s. (1-8), Art. No. 117471
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  7. A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation / aut. Prerna Chauhan, Stanislav Hasenöhrl, Ľubomír Vančo, Peter Šiffalovič, Edmund Dobročka, Daniel Machajdík, Alica Rosová, Filip Gucmann, Jaroslav jr Kováč, Igor Matko, Martin Kuball, Ján Kuzmík
    Chauhan Prerna  Hasenöhrl Stanislav Vančo Ľubomír ; 902640 Šiffalovič Peter Dobročka Edmund Machajdík Daniel Rosová Alica Gucmann Filip Kováč Jaroslav jr. ; 033000 Matko Igor Kuball Martin Kuzmík Ján
    CrystEngComm . Vol. 22, iss. 1 (2020), s. 130-141
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  8. Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure / aut. Peter Šichman, Stanislav Hasenöhrl, Roman Stoklas, Juraj Priesol, Edmund Dobročka, Štefan Haščík, Filip Gucmann, Andrej Vincze, Aleš Chvála, Juraj Marek, Alexander Šatka, Ján Kuzmík
    Šichman Peter  Hasenöhrl Stanislav Stoklas Roman Priesol Juraj ; 033000 Dobročka Edmund Haščík Štefan Gucmann Filip Vincze Andrej Chvála Aleš ; 033000 Marek Juraj ; 033000 Šatka Alexander ; 033000 Kuzmík Ján
    Materials Science in Semiconductor Processing . Vol. 118, (2020), Art. no. 105203 [5] s.
    GaN Vertical transistor Semi-insulating
    https://www.sciencedirect.com/science/article/pii/S1369800120307344
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  9. Growth of alpha- and beta-Ga(2)O(3)epitaxial layers on sapphire substrates using liquid-injection MOCVD / aut. Fridrich Egyenes-Pörsök, Filip Gucmann, Kristína Hušeková, Edmund Dobročka, Michal Sobota, Miroslav Mikolášek, Karol Fröhlich, Milan Ťapajna
    Egyenes-Pörsök Fridrich  Gucmann Filip Hušeková Kristína Dobročka Edmund Sobota Michal ; 030000 Mikolášek Miroslav ; 033000 Fröhlich Karol Ťapajna Milan
    Semiconductor Science and Technology . Vol. 35, No. 11 (2020), Art. no. 115002 [10] s.
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  10. Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD / aut. Prerna Chauhan, Stanislav Hasenöhrl, Edmund Dobročka, Marie-Pierre Chauvat, A Minj, Filip Gucmann, Ľubomír Vančo, Jaroslav jr Kováč, S Kret, Pierre Ruterana, Martin Kuball, Peter Šiffalovič, Ján Kuzmík
    Chauhan Prerna  Hasenöhrl Stanislav Dobročka Edmund Chauvat Marie-Pierre Minj A. Gucmann Filip Vančo Ľubomír ; 902640 Kováč Jaroslav jr. ; 033000 Kret S. Ruterana Pierre Kuball Martin Šiffalovič Peter Kuzmík Ján
    Journal of Applied Physics . 125, iss. 10 (2019), s. 5304-5304
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