Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability / aut. Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea N Tallarico, Enrico C Sangiorgi, Claudio Fiegna, J Zheng, X Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Šatka
Stoffels Steve  Posthuma Niels Decoutere Stefaan Bakeroot Benoit Tallarico Andrea N. Sangiorgi Enrico C. Fiegna Claudio Zheng J. Ma X. Borga Matteo Fabris Elena Meneghini Matteo Zanoni Enrico Meneghesso Gaudenzio Priesol Juraj ; 033000 Šatka Alexander ; 033000
2019 IEEE International Reliability Physics Symposium : . Art. no. 8720411 [10] s.
p-GaN gate sidewall TDDB gate leakage lifetime EBIC
článok zo zborníka
AFC - Reports at international scientific conferences
V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
Bisi Davide  Meneghini Matteo De Santi Carlo Chini Alessandro Dammann Michael Brückner Peter Mikulla Michael Meneghesso Gaudenzio Zanoni Enrico
IEEE Transactions on Electron Devices . Vol. 60, Iss. 10 (2013), s.3166-3175
článok z periodika
(1) - článok

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing
Zanoni Enrico  Danesin F. Meneghini Matteo et al.
IEEE Electron Device Letters . Vol. 30 (2009), s.427-429
článok z periodika
(1) - článok