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  1. 1.Characterization and evaluation of current transport properties of power SiC Schottky diode

    Characterization and evaluation of current transport properties of power SiC Schottky diode / aut. Aleš Chvála, Juraj Marek, Jakub Drobný, Ľubica Stuchlíková, Angelo Alberto Messina, Vincenzo Vinciguerra, Daniel Donoval
    Chvála Aleš ; 033000  Marek Juraj ; 033000 Drobný Jakub ; 033000 Stuchlíková Ľubica ; 033000 Messina Angelo Alberto Vinciguerra Vincenzo Donoval Daniel ; 033000
    11th Solid State Surfaces and Interfaces conference : . S. 285-288
    Power SiC Schottky diode Schottky barrier height Tunneling current FEM simulation
    https://www.sciencedirect.com/science/article/pii/S2214785321045168
    článok zo zborníka
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    article

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  2. 2.EBIC analysis of semi-insulating GaN/Si-doped GaN-on-GaN test structures for vertical GaN transistors

    EBIC analysis of semi-insulating GaN/Si-doped GaN-on-GaN test structures for vertical GaN transistors / aut. Juraj Priesol, Alexander Šatka, Aleš Chvála, Peter Šichman, Stanislav Hasenöhrl, Ján Kuzmík, František Uherek
    Priesol Juraj ; 033000  Šatka Alexander ; 033000 Chvála Aleš ; 033000 Šichman Peter Hasenöhrl Stanislav Kuzmík Ján Uherek František ; 033000
    WOCSDICE‐EXMATEC 2022 : . S. OP 94-95
    článok zo zborníka
    BEE - Scientific works in not noticed year-books from international undertakings, foreign year-books
    O2 - Odborný výstup publikačnej činnosti ako časť knižnej publikácie alebo zborníka
    article

    article

  3. 3.Electro-thermal simulation analysis and optimization of SiC Power MOSFET under UIS test condition

    Electro-thermal simulation analysis and optimization of SiC Power MOSFET under UIS test condition / aut. Aleš Chvála, Juraj Marek, Jozef Kozárik, Angelo Alberto Messina, Vincenzo Vinciguerra, Daniel Donoval
    Chvála Aleš ; 033000  Marek Juraj ; 033000 Kozárik Jozef ; 033000 Messina Angelo Alberto Vinciguerra Vincenzo Donoval Daniel ; 033000
    WOCSDICE‐EXMATEC 2022 : . S. OP102-OP103
    článok zo zborníka
    BEE - Scientific works in not noticed year-books from international undertakings, foreign year-books
    O2 - Odborný výstup publikačnej činnosti ako časť knižnej publikácie alebo zborníka
    article

    article

  4. 4.Electrical performance degradation of power p-GaN HEMTs exposed to repetitive short circuit conditions

    Electrical performance degradation of power p-GaN HEMTs exposed to repetitive short circuit conditions / aut. Juraj Marek, Jozef Kozárik, Michal Minárik, Aleš Chvála, Ľubica Stuchlíková
    Marek Juraj ; 033000  Kozárik Jozef ; 033000 Minárik Michal ; 033000 Chvála Aleš ; 033000 Stuchlíková Ľubica ; 033000
    WOCSDICE‐EXMATEC 2022 : . S. OP106-OP107
    článok zo zborníka
    BEE - Scientific works in not noticed year-books from international undertakings, foreign year-books
    O2 - Odborný výstup publikačnej činnosti ako časť knižnej publikácie alebo zborníka
    article

    article

  5. 5.Channel temperature determination of HEMT in quasi-static operation

    Channel temperature determination of HEMT in quasi-static operation / aut. Martin Florovič, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
    Florovič Martin ; 033000  Kováč Jaroslav jr. ; 033000 Kováč Jaroslav ; 033000 Chvála Aleš ; 033000 Jacquet Jean-Claude Delage Sylvain Laurent
    ADEPT 2021 : . S. 75-78
    HEMT GaN I-V characteristics conductance channel temperature
    článok z periodika
    AFD - Reports at home scientific conferences
    article

    article

  6. 6.Analysis and optimization of power module supported by new TCAD simulation methodology for 3-D electro-physical and advanced thermal analysis

    Analysis and optimization of power module supported by new TCAD simulation methodology for 3-D electro-physical and advanced thermal analysis / aut. Patrik Príbytný, Aleš Chvála, Juraj Marek, Daniel Donoval
    Príbytný Patrik ; 033000  Chvála Aleš ; 033000 Marek Juraj ; 033000 Donoval Daniel ; 033000
    ADEPT 2021 : . S. 235-238
    diode 3-D numerical modeling and simulation thermal management power and heat dissipation
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  7. 7.Degradation of 600V GaN HEMT with p-GaN gate under repetitive short circuit stress

    Degradation of 600V GaN HEMT with p-GaN gate under repetitive short circuit stress / aut. Jozef Kozárik, Juraj Marek, Jozef Kozárik, Aleš Chvála, Krisztián Gašparek, Miroslav Jagelka, Martin Donoval
    Kozárik Jozef ; 033000  Marek Juraj ; 033000 Minárik Michal ; 033000 Chvála Aleš ; 033000 Gašparek Krisztián ; 033000 Jagelka Martin ; 033000 Donoval Martin ; 030690
    ADEPT 2021 : . S. 219-222
    GaN HEMT repetitive short circuit DLTS degradation
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  8. 8.Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

    Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor / aut. Martin Florovič, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Martin Weis, Jean-Claude Jacquet, Sylvain Laurent Delage
    Florovič Martin ; 033000  Kováč Jaroslav jr. ; 033000 Kováč Jaroslav ; 033000 Chvála Aleš ; 033000 Weis Martin ; 033000 Jacquet Jean-Claude Delage Sylvain Laurent
    Semiconductor Science and Technology . Vol. 36, No. 2 (2021), Art. no. 025019 [9] s.
    Gallium Nitride field-effect transistor High electron mobility transistor average temperature thermal resistance
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
    article

    article

  9. 9.Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique

    Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique / aut. Juraj Priesol, Alexander Šatka, Aleš Chvála, Steve Stoffels, Brice De Jaeger, Stefaan Decoutere
    Priesol Juraj ; 033000  Šatka Alexander ; 033000 Chvála Aleš ; 033000 Stoffels Steve De Jaeger Brice Decoutere Stefaan
    IEEE Transactions on Electron Devices . Vol. 68, No. 1 (2021), s. 216-221
    AlGaN/GaN electric field electrical stress EBIC Focused Ion Beam Scanning electron microscopy Schottky diode TCAD simulation
    https://ieeexplore.ieee.org/document/9288930
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
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  10. 10.Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: Role of deep levels

    Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: Role of deep levels / aut. Roman Stoklas, Aleš Chvála, Peter Šichman, Stanislav Hasenöhrl, Štefan Haščík, Juraj Priesol, Alexander Šatka, Ján Kuzmík
    Stoklas Roman  Chvála Aleš ; 033000 Šichman Peter Hasenöhrl Stanislav Haščík Štefan Priesol Juraj ; 033000 Šatka Alexander ; 033000 Kuzmík Ján
    IEEE Transactions on Electron Devices . Vol. 68, No. 5 (2021), s. 2365-2371
    Carrier compensation electrical breakdown Semi-insulating simulation space-charge-limited current Vertical transistor
    https://ieeexplore.ieee.org/document/9384237
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
    article

    article