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  1. Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: Role of deep levels / aut. Roman Stoklas, Aleš Chvála, Peter Šichman, Stanislav Hasenöhrl, Štefan Haščík, Juraj Priesol, Alexander Šatka, Ján Kuzmík
    Stoklas Roman  Chvála Aleš ; 033000 Šichman Peter Hasenöhrl Stanislav Haščík Štefan Priesol Juraj ; 033000 Šatka Alexander ; 033000 Kuzmík Ján
    IEEE Transactions on Electron Devices . Vol. 68, No. 5 (2021), s. 2365-2371
    Carrier compensation electrical breakdown Semi-insulating simulation space-charge-limited current Vertical transistor
    https://ieeexplore.ieee.org/document/9384237
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  2. Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure / aut. Peter Šichman, Stanislav Hasenöhrl, Roman Stoklas, Juraj Priesol, Edmund Dobročka, Štefan Haščík, Filip Gucmann, Andrej Vincze, Aleš Chvála, Juraj Marek, Alexander Šatka, Ján Kuzmík
    Šichman Peter  Hasenöhrl Stanislav Stoklas Roman Priesol Juraj ; 033000 Dobročka Edmund Haščík Štefan Gucmann Filip Vincze Andrej Chvála Aleš ; 033000 Marek Juraj ; 033000 Šatka Alexander ; 033000 Kuzmík Ján
    Materials Science in Semiconductor Processing . Vol. 118, (2020), Art. no. 105203 [5] s.
    GaN Vertical transistor Semi-insulating
    https://www.sciencedirect.com/science/article/pii/S1369800120307344
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  3. Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures / aut. Stanislav Hasenöhrl, Prerna Chauhan, Edmund Dobročka, Roman Stoklas, Ľubomír Vančo, Marián Veselý, Farah Bouazzaoui, Marie-Pierre Chauvat, Pierre Ruterana, Ján Kuzmík
    Hasenöhrl Stanislav  Chauhan Prerna Dobročka Edmund Stoklas Roman Vančo Ľubomír ; 902640 Veselý Marián ; 902640 Bouazzaoui Farah Chauvat Marie-Pierre Ruterana Pierre Kuzmík Ján
    Applied Physics Express . Vol. 12, iss. 1 (2019), s. 14001-14001
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  4. Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer / aut. Prerna Chauhan, Stanislav Hasenöhrl, Edmund Dobročka, Ľubomír Vančo, Roman Stoklas, Jaroslav jr Kováč, Peter Šiffalovič, Ján Kuzmil
    Chauhan Prerna  Hasenöhrl Stanislav Dobročka Edmund Vančo Ľubomír ; 902640 Stoklas Roman Kováč Jaroslav jr. ; 033000 Šiffalovič Peter Kuzmil Ján
    Applied Surface Science . Vol.470, (2019), s. 1-7
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  5. Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors / aut. Martin Florovič, Roman Stoklas, Jaroslav jr Kováč, Peter Kordoš
    Florovič Martin ; 033000  Stoklas Roman Kováč Jaroslav jr. ; 033000 Kordoš Peter ; 033000
    Semiconductor Science and Technology . Vol. 32, No. 2 (2017), Art. no. 025017 [5] s.
    GaN field-effect transistors threshold voltage
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  6. Growth of InAlN by MOCVD / aut. Prerna Chauhan, Stanislav Hasenöhrl, Edmund Dobročka, Roman Stoklas, Ľubomír Vančo, Jaroslav Kováč, Daniel Machajdík, Alexander P Kobzev, Peter Šiffalovič, Ján Kuzmík
    Chauhan Prerna  Hasenöhrl Stanislav Dobročka Edmund Stoklas Roman Vančo Ľubomír ; 902640 Kováč Jaroslav ; 033000 Machajdík Daniel Kobzev Alexander P. Šiffalovič Peter Kuzmík Ján
    International workshop on devices and applications project : . S. 4-5
    InAlN buffer MOCVD growth AES RBS PL and absorption spectra
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  7. Temperature dependence of the threshold voltage in GaN-based HFETs and MOSHFETs / aut. Martin Florovič, Roman Stoklas, Peter Kordoš
    Florovič Martin ; 033000  Stoklas Roman Kordoš Peter ; 033000
    WOCSDICE‐EXMATEC 2016 : . [2] s.
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  8. InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator / Filip Gucmann, Dagmar Gregušová, Roman Stoklas, Ján Dérer, R Kúdela, Karol Fröhlich, Peter Kordoš
    Gucmann Filip ; E030  Gregušová Dagmar Stoklas Roman Dérer Ján Kúdela R. Fröhlich Karol Kordoš Peter ; E030
    Applied Physics Letters . Vol. 105, (2014), Art. no 183504 [4] p.
    http://scitation.aip.org/content/aip/journal/apl/105/18/10.1063/1.4901170
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  9. Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator
    Stoklas Roman  Gregušová Dagmar Hušeková Kristína Marek Juraj ; E030 Kordoš Peter ; E030
    Semiconductor Science and Technology . Vol. 29, Iss. 4 (2014), Art. No. 045003
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  10. III-As high electron mobility transistors with recessed ex-situ gate oxide / aut. Filip Gucmann, R Kúdela, Karol Fröhlich, Jozef Liday, Peter Vogrinčič, Štefan Gaži, Roman Stoklas, Peter Kordoš, Jozef Novák, Dagmar Gregušová
    Gucmann Filip ; E030  Kúdela R. Fröhlich Karol Liday Jozef ; E030 Vogrinčič Peter ; R2640 Gaži Štefan Stoklas Roman Kordoš Peter ; E030 Novák Jozef Gregušová Dagmar
    ADEPT 2014 : . S. 5-8
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