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  1. Channel temperature determination of HEMT in quasi-static operation / aut. Martin Florovič, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
    Florovič Martin ; 033000  Kováč Jaroslav jr. ; 033000 Kováč Jaroslav ; 033000 Chvála Aleš ; 033000 Jacquet Jean-Claude Delage Sylvain Laurent
    ADEPT 2020 : . S. 41-44
    HEMT GaN I-V characteristics conductance channel temperature
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  2. DLTS study of defect distribution in GaAsN p-i-n structures for solar cells / aut. Arpád Kósa, Jakub Drobný, Wojciech Dawidowski, Miroslav Mikolášek, Jaroslav jr Kováč, Beata Sciana, Ľubica Stuchlíková
    Kósa Arpád ; 033000  Drobný Jakub ; 033000 Dawidowski Wojciech Mikolášek Miroslav ; 033000 Kováč Jaroslav jr. ; 033000 Sciana Beata Stuchlíková Ľubica ; 033000
    ADEPT 2020 : . S. 183-186
    GaAsN defects DLTS study
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  3. IP-Dip based 1:4 branch splitter / aut. Peter Gašo, Dušan Pudiš, Dana Seyringer, Anton Kuzma, L Gajdošová, T Mizera, Matej Goraus
    Gašo Peter  Pudiš Dušan Seyringer Dana Kuzma Anton ; 033000 Gajdošová L. Mizera Tomáš Goraus Matej
    ADEPT 2020 : . S. 155-158
    splitter IP-Dip polymers 3D direct laser writing
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  4. MoS2/GaP heterojunction - Formation and properties / aut. Jozef Novák, Agáta Laurenčíková, Peter Eliáš, Stanislav Hasenöhrl, Michaela Sojková, Jaroslav jr Kováč, Jaroslav Kováč
    Novák Jozef  Laurenčíková Agáta Eliáš Peter Hasenöhrl Stanislav Sojková Michaela Kováč Jaroslav jr. ; 033000 Kováč Jaroslav ; 033000
    ADEPT 2020 : . S. 21-24
    metal dichalcogenides PN heterojunction spectral response
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  5. Impact of repetitive inductive switching on degradation of power SiC MOSFETs / aut. Juraj Marek, Jozef Kozárik, Aleš Chvála, Michal Minárik, Pavol Špánik, Martin Jagelka, Martin Donoval
    Marek Juraj ; 033000  Kozárik Jozef ; 033000 Chvála Aleš ; 033000 Minárik Michal ; 033000 Špánik P. Jagelka Martin ; 033000 Donoval Martin ; 030690
    ADEPT 2020 : . S. 49-52
    4H-SiC MOSFETs electrical parameters degradation hot carriers repetitive unclamped inductive switching
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  6. Investigation of electrically active defects in InAlGaN/GaN/SiC HEMT / aut. Jakub Vadovský, Jakub Drobný, Arpád Kósa, Peter Benko, Jaroslav Kováč, Sylvain Laurent Delage, Ľubica Stuchlíková
    Vadovský Jakub ; 030000  Drobný Jakub ; 033000 Kósa Arpád ; 033000 Benko Peter ; 033000 Kováč Jaroslav jr. ; 033000 Delage Sylvain Laurent Stuchlíková Ľubica ; 033000
    ADEPT 2020 : . S. 179-182
    HEMT DLTFS InAlGaN GTML FAT Schottky barrier
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  7. Modeling of HEMT device using neural network / aut. Ľuboš Černaj, Aleš Chvála, Juraj Marek, Daniel Donoval, Jozef Kozárik, Tomáš Závodník
    Černaj Ľuboš ; 033000  Chvála Aleš ; 033000 Marek Juraj ; 033000 Donoval Daniel ; 033000 Kozárik Jozef ; 033000 Závodník Tomáš ; 033000
    ADEPT 2020 : . S. 163-166
    GaN HEMT neural network
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  8. High temperature operation of the MEMS piezoelectric sensor based on AlGaN/GaN heterostructure / aut. Gabriel Vanko, Jaroslav Dzuba, Milan Držík, Vladimír Kutiš, S Kasemann, J Zehetner
    Vanko Gabriel  Dzuba Jaroslav Držík Milan Kutiš Vladimír ; 030400 Kasemann S. Zehetner J.
    ADEPT 2020 : . S. 33-36
    III-N heterostructures MEMS piezoelectricity harsh environments pressure sensors high electron mobility transistors
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  9. Neural network based electrothermal circuit model of power HEMT / aut. Aleš Chvála, Ľuboš Černaj, Martin Florovič, Juraj Marek, Patrik Príbytný, Jozef Kozárik, Daniel Donoval, Jaroslav Kováč, Jaroslav jr Kováč
    Chvála Aleš ; 033000  Černaj Ľuboš ; 033000 Florovič Martin ; 033000 Marek Juraj ; 033000 Príbytný Patrik ; 033000 Kozárik Jozef ; 033000 Donoval Daniel ; 033000 Kováč Jaroslav ; 033000 Kováč Jaroslav jr. ; 033000
    ADEPT 2020 : . S. 45-48
    neural network electrothermal circuit model power HEMT
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  10. Design of basic integrated photonic devices for use in optical communication systems / aut. Martin Ziman, Jozef Chovan, T Kuzma, František Uherek, Jaroslav jr Kováč
    Ziman Martin ; 033000  Chovan Jozef Kuzma Anton ; 033000 Uherek František ; 033000 Kováč Jaroslav jr. ; 033000
    ADEPT 2020 : . S. 119-122
    photonics SiON waveguide simulation design directional coupler
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article