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  1. Channel temperature determination of HEMT in quasi-static operation / aut. Martin Florovič, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
    Florovič Martin ; 033000  Kováč Jaroslav jr. ; 033000 Kováč Jaroslav ; 033000 Chvála Aleš ; 033000 Jacquet Jean-Claude Delage Sylvain Laurent
    ADEPT 2021 : . S. 75-78
    HEMT GaN I-V characteristics conductance channel temperature
    článok z periodika
    AFD - Reports at home scientific conferences
    article

    article

  2. Analysis and optimization of power module supported by new TCAD simulation methodology for 3-D electro-physical and advanced thermal analysis / aut. Patrik Príbytný, Aleš Chvála, Juraj Marek, Daniel Donoval
    Príbytný Patrik ; 033000  Chvála Aleš ; 033000 Marek Juraj ; 033000 Donoval Daniel ; 033000
    ADEPT 2021 : . S. 235-238
    diode 3-D numerical modeling and simulation thermal management power and heat dissipation
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  3. Degradation of 600V GaN HEMT with p-GaN gate under repetitive short circuit stress / aut. Jozef Kozárik, Juraj Marek, Jozef Kozárik, Aleš Chvála, Krisztián Gašparek, Miroslav Jagelka, Martin Donoval
    Kozárik Jozef ; 033000  Marek Juraj ; 033000 Minárik Michal ; 033000 Chvála Aleš ; 033000 Gašparek Krisztián ; 033000 Jagelka Martin ; 033000 Donoval Martin ; 030690
    ADEPT 2021 : . S. 219-222
    GaN HEMT repetitive short circuit DLTS degradation
    článok zo zborníka
    AFD - Reports at home scientific conferences
    article

    article

  4. Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor / aut. Martin Florovič, Jaroslav jr Kováč, Jaroslav Kováč, Aleš Chvála, Martin Weis, Jean-Claude Jacquet, Sylvain Laurent Delage
    Florovič Martin ; 033000  Kováč Jaroslav jr. ; 033000 Kováč Jaroslav ; 033000 Chvála Aleš ; 033000 Weis Martin ; 033000 Jacquet Jean-Claude Delage Sylvain Laurent
    Semiconductor Science and Technology . Vol. 36, No. 2 (2021), Art. no. 025019 [9] s.
    Gallium Nitride field-effect transistor High electron mobility transistor average temperature thermal resistance
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    article

    article

  5. Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique / aut. Juraj Priesol, Alexander Šatka, Aleš Chvála, Steve Stoffels, Brice De Jaeger, Stefaan Decoutere
    Priesol Juraj ; 033000  Šatka Alexander ; 033000 Chvála Aleš ; 033000 Stoffels Steve De Jaeger Brice Decoutere Stefaan
    IEEE Transactions on Electron Devices . Vol. 68, No. 1 (2021), s. 216-221
    AlGaN/GaN electric field electrical stress EBIC Focused Ion Beam Scanning electron microscopy Schottky diode TCAD simulation
    https://ieeexplore.ieee.org/document/9288930
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    article

    article

  6. Power SiC MOSFET under repetitive UIS and short circuit stress / aut. Juraj Marek, Jozef Kozárik, Aleš Chvála, Michal Minárik, Martin Donoval
    Marek Juraj ; 033000  Kozárik Jozef ; 033000 Chvála Aleš ; 033000 Minárik Michal ; 033000 Donoval Martin ; 030690
    ADEPT 2021 : . S. 67-70
    reliability degradation SiC MOSFET TrenchMOSFET repetitive UIS repetitive short circuit
    článok z periodika
    AFD - Reports at home scientific conferences
    article

    article

  7. Calibration of electrothermal circuit model of power IGBT module / aut. Aleš Chvála, Juraj Marek, Patrik Príbytný, Jozef Kozárik, Daniel Donoval
    Chvála Aleš ; 033000  Marek Juraj ; 033000 Príbytný Patrik ; 033000 Kozárik Jozef ; 033000 Donoval Daniel ; 033000
    ADEPT 2021 : . S. 71-74
    electrothermal circuit model power IGBT module RC thermal network
    článok z periodika
    AFD - Reports at home scientific conferences
    article

    article

  8. Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: Role of deep levels / aut. Roman Stoklas, Aleš Chvála, Peter Šichman, Stanislav Hasenöhrl, Štefan Haščík, Juraj Priesol, Alexander Šatka, Ján Kuzmík
    Stoklas Roman  Chvála Aleš ; 033000 Šichman Peter Hasenöhrl Stanislav Haščík Štefan Priesol Juraj ; 033000 Šatka Alexander ; 033000 Kuzmík Ján
    IEEE Transactions on Electron Devices . Vol. 68, No. 5 (2021), s. 2365-2371
    Carrier compensation electrical breakdown Semi-insulating simulation space-charge-limited current Vertical transistor
    https://ieeexplore.ieee.org/document/9384237
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    article

    article

  9. Theoretical and experimental substractions of device temperature determination utilizing I-V characterization applied on AlGaN/GaN HEMT / aut. Martin Florovič, Jaroslav jr Kováč, Aleš Chvála, Jaroslav Kováč, Jean-Claude Jacquet, Sylvain Laurent Delage
    Florovič Martin ; 033000  Kováč Jaroslav jr. ; 033000 Chvála Aleš ; 033000 Kováč Jaroslav ; 033000 Jacquet Jean-Claude Delage Sylvain Laurent
    Electronics . Vol. 10, iss. 22 (2021), Art. no. 2738 [12] s.
    AlGaN FET GaN HEMT thermal current temperature profile average temperature
    https://www.mdpi.com/2079-9292/10/22/2738
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    article

    article

  10. Degradation of power SiC MOSFET under repetitive UIS and short circuit stress / aut. Juraj Marek, Jozef Kozárik, Aleš Chvála, Michal Minárik, Ľubica Stuchlíková
    Marek Juraj ; 033000  Kozárik Jozef ; 033000 Chvála Aleš ; 033000 Minárik Michal ; 033000 Stuchlíková Ľubica ; 033000
    ISPS '21 : . S. 70-75
    reliability degradation SiC MOSFET TrenchMOSFET repetitive unclamped inductive switching repetitive short circuit
    článok zo zborníka
    AFC - Reports at international scientific conferences
    article

    article