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Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMT
- monolithic integration. NAND and NOR logic cells. InAlN/GaN HEMT. 2D device modeling and simulation. HEMT circuit modelChvála, Aleš, 1981- Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMT / aut. Aleš Chvála, Lukáš Nagy, Juraj Marek, Juraj Priesol, Daniel Donoval, Alexander Šatka, Michal Blaho, Dagmar Gregušová, Ján Kuzmík. -- 2-s2.0-85066080697. -- 000503001600010. -- 10.1142/S0218126619400097. Nagy, Lukáš, 1985-. Marek, Juraj, 1983-. Priesol, Juraj, 1986-. Donoval, Daniel, 1953-. Šatka, Alexander, 1960-. Blaho, Michal, 1982-. Gregušová, Dagmar. Kuzmík, Ján In: Journal of Circuits Systems and Computers. -- ISSN 0218-1266. -- Vol. 28, No. 1 (2019), Art. no. 1940009 [10] s.
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