GREGUŠOVÁ, Dagmar et al. Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide. In EW-MOVPE. 12th European Workshop on Metalorganic Vapour Phase Epitaxy : Bratislava, Slovakia, 3.-6.6.2007. Bratislava : Slovak Academy of Sciences, 2007, s.85-88. E*758/11/2007