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Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide
- Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide
Gregušová Dagmar Stoklas Roman Čičo Karol Lalinský Tibor Fröhlich Karol Novák J. Kordoš Pavol
EW-MOVPE. 12th European Workshop on Metalorganic Vapour Phase Epitaxy : . s.85-88
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Počet záznamov: 1